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Standard Power MOSFET
N-Channel Enhancement Mode
VDSS IXTH 12 N50A IXTM 12 N50A 500 V 500 V
ID25 12 A 12 A
RDS(on) 0.4 0.4
Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C
Maximum Ratings 500 500 20 30 12 48 180 -55 ... +150 150 -55 ... +150 V V V V A A W C C C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
D G = Gate, S = Source,
G
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C
D = Drain, TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features
q q q q
q
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 0.40 V V nA A mA
Applications
q
VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 250 A V DS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 V DS = 0.8 * VDSS VGS = 0 V
q q q
Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
Advantages
q
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
q q
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
91541E(5/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629
IXTH 12N50A IXTM 12N50A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7.5 9 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 4.7 , (External) 27 76 32 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 15 40 30 40 100 60 120 25 50 0.70 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD (IXTH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 * ID25, pulse test
Dim.
Source-Drain Diode Symbol IS I SM VSD trr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 600
TO-204AA (IXTM) Outline
ns
Pins
1 - Gate 2 - Source Case - Drain
Dim.
Millimeter Min. Max. A 6.4 11.4 A1 3.42 b .97 1.09 D 22.22 e 10.67 11.17 e1 5.21 5.71 L 7.93 p 3.84 4.19 p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14
Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXTH 12N50A IXTM 12N50A
Fig. 1 Output Characteristics
25
TJ = 25C VGS = 10V 7V
Fig. 2 Input Admittance
25 20
6V
20
ID - Amperes
ID - Amperes
15 10
5V
15 10 5 0
TJ = 25C
5 0
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
T J = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.3
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75
ID = 6A
1.2 1.1 1.0 0.9 0.8 0 5 10 15 20 25
VGS = 10V V GS = 15V
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
15.0 12.5
12N50A
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th) BVDSS
1.1
BV/VG(th) - Normalized
50 75 100 125 150
ID - Amperes
10.0 7.5 5.0 2.5 0.0
1.0 0.9 0.8 0.7 0.6
-50
-25
0
25
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
TJ - Degrees C
IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
IXTH 12N50A IXTM 12N50A
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 250V ID = 6.5A IG = 10mA
Fig.8 Forward Bias Safe Operating Area
100
10s
ID - Amperes
VGS - Volts
10
Limited by RDS(on)
100s 1ms
6 5 4 3 2 1 0 0 25 50 75 100
1
10ms 100ms
0.1 1 10 100
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4000 3500 25 20
Fig.10 Source Current vs. Source to Drain Voltage
Capacitance - pF
3000 2500 2000 1500 1000 500 0 0 5 10
IS - Amperes
Ciss
15
T J = 125C
10
TJ = 25C
Coss Crss
5 0 0.00
15
20
25
0.25
0.50
0.75
1.00
1.25
1.50
VDS - Volts
VSD - Volt
Fig.11 Transient Thermal Impedance
1.00
Thermal Response - K/W
D = 0.5 D = 0.2
0.10 D = 0.1
D = 0.05 D=0.02 D=0.01
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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